Ph 445 Microelectronic Device Fabrication I
The first part of the series includes crystal growth, crystal structure, wafer preparation, ion implantation, doping and diffusion, oxidation, defects, heterogeneous chemical reactions, thermodynamics and kinetics of basic processes such as diffusion and oxidation. These concepts are applied both to IC and photovoltaic device fabrication. Realistic process flows, physical metrology, device structure, electrical behavior and their trade-offs are discussed. Extension and limitation of "top-down" processing to fabrication of nanoscale structures such as nano-rods, nano-wires, etc., and application of these to devices are also introduced. Also offered for graduate-level credit as Ph 545 and may be taken only once for credit.
Prerequisite
Prerequisite:
Ph 314 or consent of instructor